Page 25 - Vol.14

Tech
Notes
技術專文
Influence of Clean- Figure 1. Critical defect trend of EUV mask Figure 2. Defects image on EUV mask

room Ambient Humidity 35 EUV masks defects-ITRS 5.00
30
EUV mask inspection (Suppliers)
25
4.00
on the Formation of Defect size [nm] 20 2.00

15
10
Nanoparticles 5 0

30
20
Flash Half Pitch [nm] 10 0 0 2.00 4.00 6.00 0 μm
文│郭啟文│廠務技術發展專案│

ೌྡྷ܃ᐑྤ᐀ܓ࿁׵
Introduction specified limits. The level to With the application of an AFM
քϷ୐ɿϮݑ͛ϓٙᅂᚤ which these contaminations need image survey, these defects show
a random distribution with a
to be removed depends upon
The prevailing cleanroom standard the manufacture exquisite level localized high density particle
Water condensationed on wafer surfaces is highly related to the formation of nanometer size defect. In the is the Federal Standard 209E which required. There are many ways region, ty pica l ly 5-25nm in
manufacturing processes for semiconductor, a steady low-humidity environment is required. Furthermore, fi ndings is a document that establishes to control contamination of the height and less than 500nm in
from the history log of time versus defect numbers in the life span of silicon wafer storage show that means of standard classes of air cleanliness production, ambient humidity, plane diameter, and these defects
reducing wafer environment moisture could prevent defect formation and enhance yield greatly. This paper will study for airborne particulate levels in pressure, temperature, particle could easily be removed by water
the relationship between humidity and nanoparticle defects in semiconductor manufacturing factories and a practical, cleanrooms and clean zones, but filtration, chemical filtration and rinsing or heat treatment. It
effective solution is proposed for this problem. there is more and more evidence air flow directions all need to be appears that the time dependent
showing nanoparticles will be tightly restricted. ha ze may be approx i mately
the issue presenting an enormous close to the water spot. The
challenge to N10 and N7 production Si l icon wa fe r s a r e us e d to water adsorption on the wafer
in the semiconductor industry. transfer patterns on the surface surface is due to the existence of
Particle defects which have a size of the wafers. The fabrication of ambient moisture which is very
of less than 20nm were usually semiconductor circuits requires adhesive to the airborne molecular
detected on the EUV mask[1]. The multiple pattern layers, thus contaminations. This is the main
trend chart and the AFM image anything that is not intended speculation to the flat dish shape
of particle defect on the EUV to be deposited on the wafer and high hydrosoluble properties
mask are shown in Figure 1 and surface is regarded as defect. For of the defects. Larry W. Shive et al.
Figure 2. Besides, nanoparticles are example, the “time-dependent performed a series of wafer storage
atomic force dominated defects haze” (TDH). TDH is a formation contamination studies. Dummy
which are difficult to remove, of light point defects which were wafers were immediately packaged
different to the microparticle not present when the bare wafers for 6 and 18 months after thorough
[2]
forces. With i n a cont rol led just left the production line in the clean and defect inspection . The
environment, the concentration of manufacturing factory. The “time- trend chart of the wafer defect size
airborne molecular contamination dependent haze” is shown in Figure larger than 0.12um after 6 month
and particles are controlled to 3. and 18 month storage is shown in

進入台積兩年餘，學習奈米粒子
啟文
污染防治的相關知識，很感謝長
官與同仁一路來的支持與協助，
提供我成長與修習的機會。
郭 Chi-Wen Kuo

22 NEW FAB JOURNAL JUNE 2014 23