Page 85 - Vol.44
P. 85

5.  結論
                                                                       本次研究以氯氣為研究對象,針對特氣元件更換過程中
                                                                   的實際條件,計算出所需控制的環境濕度,並成功在實際更換
                                                                   過程中驗證此手法精進的可行性。此更換手法除了能減少HCl
                                                                   的形成,降低特氣元件被腐蝕及形成二次汙染的情形,同時也
                                                                   減少操作人員接觸腐蝕性氣體的風險。


                                                                   參考文獻

                                                                   [01]   S. M. Fine, et al., The role of moisture in the corrosion of HBr gas
                                                                       distribution system, J. Electrochem. Soc, 1995.
                                                                   [02]   P. L. T. Brian, et al., The effect of temperature on the rate of absorption
                                                                       of chlorine into water, Chem. Eng. Sci., 1966.
                                圖6、現場溼度計讀值
                                                                   [03]   G. L. Squadrito, et al., Elucidating mechanisms of chlorine toxicity
                                                                       reaction kinetics, thermodynamics, and physiological implications,
                                                                       Am. J. Physiol. Lung Cell Mol. Physiol., 2010.
                4.2  設備機台檢測
                                                                   [04]   C. W. Spalding,  Reaction kinetics in the absorption of chlorine into
                                                                       aqueous media, AIChE J, 1962.
                    本次研究搭配設備機台(AMET-B)PM停機更換,在更換完
                                                                   [05]   M. Gershezon, et al., Rate constant for the reaction of Cl2(aq) with
                成後針對顆粒(particle, PA)、蝕刻速率(Etch rate, E/R)及蝕刻均          OH-, J. Phys. Chem. A, 2002.
                                                                   [06]   Danckwerts, P. V. Gas-Liquid Reactions, Chemical Engineering Series;
                勻度Etch rate uniformity, E/R uniformity進行monitor,確認更
                                                                       McGraw-Hill; New York, 1970.
                換前後品質相符(圖7),也驗證此PM精進手法的實際應用性。
                                                                   作者介紹

                                                                            陳建佑  Chien-Yu Chen
                                                                            國立台灣大學環工所畢業。
                                                                            No pain, no gain.











                                  圖7ⓐ、PA count


















                             圖7ⓑ、E/R & E/R uniformity















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