Page 72 - Vol.13

New
Vision
新象新知

Weakness and
Strength

a s e d on c on s e r va t i ve
estimation, even by shot or
Bscan process cannot provide
double throughput capability, the die
cost saving still can reach around 20%
in comparison with same technology
node in 300mm production.

Silicon wafers are made by CZ method
(Czochralski method), followed
300mm’s, in 450mm era. Fig.2 The main
Fuel In ow Depleted Fuel
(Glucose) Out ow issue is the center sag level worse than
(Gluconolactone)
300mm’s. If the sag level needs to keep
Anode
(High-Surface-Area Platinum) 2e as 300mm’s level, the wafer thickness
Glucose Oxidation
+
C H O +H O → C H O +2H +2e Electrons are will reach 1744um, far thicker than
Forced Through an
Separetor Membrane External Load current standard 925 +/- 25um. [2] The
(Cation-Selective Na on)
2H + + ∆G = 2.51×10 J mol potential impacts are wafer handling
Only Positive lons (H but not e ) U = 1.30 V
Can Flow from Anode to Cathode
Through the Separator and the silicon defects appearance
Electrons Recombine
Cathode with Hydrogen lons and after high-temperature thermal
(Single-Walled Carbon Nanotubes) Oxygen at Cathode treatments. The other challenge is the
Reduction of Oxygen to Water H O to form Water
+
½O + 2H + 2e → H O silicon ingot might be hardly to reach
½O
Oxidant In ow the same length like 300mm’s. Shorter
(Oxygen)
ingot length, thicker wafer and longer
Source. Rapoport BI, Kedzierski JT, Sarpeshkar R (2012) A Glucose Fuel Cell for crystallization and cooling time
Implantable Brain–Machine Interfaces. PLoS ONE 7(6): e38436.
indicate the cost reduction will take
Fig.1 Power Extraction from Cerebrospinal Fluid by an Implantable more innovations and longer learning
Glucose Fuel Cell.
curve to reach.
generate electricity as bioimplantable power sources. Fig.1 [1] This industry has got a consensus
This indicates ultra-low power chips or micro-devices can be on making a standard to remove
implanted in human body and operated in a very long period wafer notch, which is replaced by 3
time without changing battery because this kind of glucose fuel wafer back-side fiducial marks away
cell can support electricity successfully. from wafer bevel 1.5mm. It is not so
complex to set up a brand new process
Those ultra-low power consumption and high computing flow for notchless wafer production,
performance devices will dominate the potential market
demands in the coming decade. Beside of mobile phones, for just adjusting few steps and sequence.
example, new devices for wearable technology are soaring up The benefits cover almost all kind
in wider and wider applications. This stands for more advanced of processes, mainly on uniformity
technology nodes which will be required soon with higher and improvements, and the hardware
higher die cost and more and more sophisticated manufacturing design of process tools can be more
difficulties. easier without a dedicated care on the
notch area. Currently only two module
450mm era brings an opportunity to lower the cost and technical need to design new solutions to meet
barrier by new design chamber, IT technology and advanced notchless wafer characteristics. The
process control. In 90nm technology node, the mask layers first one is the wafer orientator or
are below forty, but it will become around seventies in 10nm aligner. Since current wafer sorters
technology node. It seems impossible to drive the ultra-low have applied image technologies to
power application become poplar without aggressive die cost recognize characters or patterns,
saving and more output production. therefore just a change from a pure

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