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廠務季刊  Facility Journal 2023


              光譜分析儀應用於低壓氣體品質監測之技術開發
              Development of a quality monitoring technique of low-pressure gases by
              applying the Optical Emission Spectroscopy(OES)
                                                                       文│王紹宇 蔣竣光 劉俊男│台中廠務四部



                                                        摘要




                  摘要                                    F15B 廠務過去三年曾歷經了多次 SiCl 4 氣體鋼瓶供應品質異
                                                        常的狀況。每次事件都是發生在氣櫃切邊供應之後約莫 20-60
                  1. 前言
                                                        分鐘,線上機台反映測得 N 2 不純物,今年在 F18A 與 F15A 也
                  2. 文獻探討                               遇到類似情形。為解決此問題,本研究開發了一套採用自形
                                                        成 電 漿 光 譜 (Self Plasma Optical Emission Spectroscopy,
                    2.1  SiCl 4 鋼瓶品質異常案例分享
                                                        SPOES) 量測技術的分析儀,用以偵測 SiCl 4 低壓氣體鋼瓶
                    2.2  SPOES分析儀的應用                    內之 N 2 不純物。實驗參數比照線上機台設定,針對波長為
                                                        337nm 光強度進行量測,並控制在 2torr 的低壓量測環境。
                  3. 實驗方法
                                                        實驗結果顯示,透過連續分析 337nm 光譜強度的變化,
                  4. 結果與討論                              SPOES 可有效的辨別出內含 N 2 不純物的品質異常鋼瓶。
                    4.1  OES量測分析參數測試與選定                 關鍵詞 : 四氯化矽、光譜分析儀、N 2 不純物
                    4.2  SPOES對品質異常/正常
                                                        F15B facility has experienced several SiCl 4  gas cylinder
                            SiCl 4 鋼瓶的辨別力測試
                                                        quality abnormal events in the past three years. All
                                                        the events occurred after the abnormal cylinder was
                  5. 結論
                                                        switched to supply for about 20 to 60 minutes, then
                  參考文獻                                  the  N 2   impurity  was  detected  by  the  etching  tool.
                                                        Similar cases also occurred at F18A and F15A in this
                  作者介紹                                  year. To solve this problem, this study developed an
                                                        analyzer  by  using  the  self-plasma  optical  emission
                                                        spectroscopy(SPOES)technique, to detect the N 2  impurity
                                                        in the SiCl 4  gas cylinder. The measurement parameters
                                                        were set as the same with etching tool, in which the
                                                        detected  wavelength  is  focused  on  337nm  and  the
                                                        pressure was controlled at 2torr. Results showed that by
                                                        continuous analyzing the intensity of 337nm wavelength,
                                                        the SPOES is able to distinguish the abnormal SiCl 4  gas
                                                        cylinder containing with N 2  impurity.
                                                        Keywords : Silicon Chloride, Self Plasma-Optical
                                                        Emission Spectroscopy(SPOES), N 2  Impurity























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